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Abstract
The quantum emission in hBN, a 2D wide-band semiconductor, displays high wavelength tunability, brightness, and polarization operating at room temperature. This emission stems from localized defects whose electronic level fall within the band gap. However, despite a significant amount of work the mechanism leading to quantum emission is still undisclosed. In this seminar I will present our results on the investigation of the defects in hBN using Resonant Inelastic X-ray Scattering (RIXS) and photoluminescence uncovering a common mechanism for defect emission based on donor acceptor pairs. This approach generalizes a significant number of emitters in this material previously believed to be independent. Moreover, we recently developed laser-RIXS setup able to induce defects in hBN akin to the one observed to plasma treated. Combined these results place a molecular-like defect as a key candidate for the quantum emission of hBN.
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