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Kang Chen Normal rrick 10 114 2006-07-26T00:00:00Z 2007-01-23T01:29:00Z 1 2312 13179 Stanford Linear Accelerator Center 109 30 15461 11.8107

This page contains the parameters for each metal deposition run on the chips.

Metallica #1

Date	8/13/03
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	2nm
-(time)(power)(repeats)	?
Thick Metal Layer	Au
-target thickness (actual)	3nm
-(time)(power)(repeats)	?

Notes	This deposition was to put down a c onducting layer on SiN membranes to reduce charging while depositing Pt on them in the FIB

Metallica#2

Date	Nov. 20, 2003
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~2nm
-(time) (power) (repeats)	?
Thick Metal Layer	Au (99.99% purity)
-target deposition thickness (actual)	1000 n m ( ? ? nm)
-(time) (power) (repeats)	(10 min) (100W) with 2 repeats for a total of 20 minutes
Reference < /p>	Vol 2 page 67

Notes	Placed 16 chips with membrane up on the wafer for Au sputtering. 6 chips were placed with the frame up so that the gold will be deposited on the backside.
< /td>

Metallica#3

Date	Jan. 18, 2004
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(1.25min) (50W) one time
Thick Metal Layer	Au (99.99% purity)
-target deposition thickness (actual)	600 nm ( ?? nm)
-(time) (power) (repeats)	(10 min) (50W) for 2.5 repeats for a total of 25 min
Reference	Vol 3 page 2

Notes	About 13 membrane with pits up were deposited and 2 with pit down. The slower deposition resulted in a smaller grain size.
&nbs p;

Metallica#4

Date	Aug. 8, 2004
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(1.25min) (50W) one time
Thick Metal Layer	Au (99.9% purity)
-target deposition thickness (actual)	2.0 micrometers ( 2.?? micrometers)
-(time) (power) (repeats)	(10 min)(100W) four repeats for a total time of 40min
Reference	Vol 4 page 21

~~e4195~~ ~~Magnetic Multilayer~~

Date < /td>	Jan 30, 2004
Machine and method	Olav at Hitachi
Sticking Layer	N/A
-thickness
-(time) (power) (repeats)
Thick Metal Layer	&nb sp;Pt(20nm) [Co(1.2nm)Pt(0.7nm)]_50 Pt(1.2nm)
-target deposition thickness (actual)	Total Pt--> 56.2nm Total Co --> 60.0 nm< tr style='mso-yfti-irow:7'>
-(time) (power) (repeats)
Reference	Vol 3 page 24

~~e4196 Magnetic Multilayer~~

~~Date~~

~~Jan 30, 2004~~

~~Machine and method~~

~~Olav at Hitachi~~

~~Sticking Layer~~

~~N/A~~

~~-thickness~~

~~-(time) (power) (repeats)~~

~~Thick Metal Layer~~

~~Pd(20nm) [Co(1.2nm)Pd(0.7nm)]_50 Pd(1.2nm)~~

~~-target deposition thickness (actual)~~

~~Total Pd--> 56.2nm Total Co --> 60.0 nm~~

~~-(time) (power) (repeats)~~

~~Reference~~

~~Vol~~ ~~3 page 24~~

~~Golden Gate~~ #2

Date
Machine and method	Golden Gat e Chamber at SSRL ring, magnetron sputter
Sticking Layer	Al
-thickness
-(time) (power) (repeats)
T hick Metal Layer	Au (99.99% purity)
-target deposition thickness (actual)	900nm (~800nm)
-(time) (power) (repeats)	(80 min)(50W)
Reference	Vol 4 page 66

~~The sticking layer for this deposition didn't adhere well.~~

~~Golden Gate~~ #3

Date	Oct. 13, 20 04
Machine and method	Golden Gate Chamber at SSRL ring, magnetron sputter
Sticking Layer	Al
-thickness
-(time) (power) (repeats)	2min 50W
Thick Metal Layer	Au (99.99% purity)
-target deposition thickness (actual)	900um (~900um)
-(time) (power) (repeats)	(100 min)(50W)
Reference	Vol 4. page 99

~~Golden Gate~~ #4

Date	Oct. 17, 2004
Machine and method	Golden Gate Chamber at SSRL ring, magnetron sputter < /td>
Sticking Layer	Al
-thickness
-(time) (power) (repeats)	2min 50W
Thick Metal Layer	Au (99.99% purity)
-target deposition thickness (actual)	900um (~900um)
-(time) (power ) (repeats)	(100 min)(50W)
Reference	Vol 5. page 15

~~e46XX~~

E4632 Pt(200) [Co(4) Pt(7)]50 Pt(20) wafer + 2x 200x200 micrometer mem. + 2x 150x100 micrometer mem.

E4632a Pt(200) [Co(4)Pt(7)]50 Pt(3020) 1x 200x200 micrometer mem. + 1x 150x100 micrometer mem.

E4632b Pt(200) [Co(4)Pt(7)]50 Pt(1020) 1x 200x200 micrometer mem. + 1x 150x100 micrometer mem. (holder)

E4633 Pt(200) [Co(4)Pt(7)]50 Pt(20) wafer + 1x 200x200 micrometer mem. + 1x 150x100 micrometer mem.

E4633a Pt(200) [Co(4)Pt(7)]50 Pt(3020) 1x 200x200 micrometer mem. + 1x 150x100 micrometer mem< /span>.

E4633b Pt(200) [Co(4)Pt(7)]50 Pt(1020) 1x 200x200 micrometer mem. + 1x 150x100 micrometer mem. (sticky tape)

~~E4641 Pt(200) [Co(4)Ni(10)]2 Co(4)Ru(50) [Co(4)Pt(7)]15 {20mTorr} Pt(20) (perp. AFC media model system, hard/soft layer)~~

~~wafer + 2x 200x200 micrometer mem. + 2x 150x100 micrometer me m.~~

~~E4644 Pt(200) [Co(4)Pt(7)]200 Ru(50) [Co(4)Ni(10)]30 Pt(20) (2 diff. domain sizes, demag fields interact~~ ~~?/span> domain struc ture ?)~~

~~wafer + 2x 200x200 micrometer mem. + 2x 150x100 micrometer mem.~~

~~E4645 Pt(200) [Co(4)Pt(7)]25 Co(4)Ru(9) [Co(4)Ni(10)]2 Co(4)Ru(9) ) [Co(4)Pt(7)]25 Pt(20) (probe Ni layer AF coupled !?)~~

~~wafer + 2x 200x200 micrometer mem. + 2x 150x100 micrometer mem.~~

E4656 Pt(200) [Co(4)Ni(10)]x8 Co(4)Ru(50) (all at 3 mTorr Ar pressure)
[Co(4)Pt(7)]x15 {at 20mTorr} Pt(15) (again at 3 mTorr)

~~4 chips~~

~~Metallica#5~~

Date	Feb. 24, 2005
Machine and method	Metallica at CIS, magnetr on sputter
Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(1.25min) (50W) one time
Thick Metal La yer	Au (99.99% purity) New target from williams
-target deposition thickness (actual)	900 nm ( ~1300 nm)
-(time) (power) (repeats)	(12 min + 12min +12 min) (50W)
Reference	Vol 5 page 66

Notes	About 20 chips ~5 200x200 um and 15 150x100um Initial FIB analysis shows that this was much thicker than expected and was very difficult to do a selective etch.

~~Metallica#6~~

Date	March 7, 2005
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(2.0min) (50W) one time
Thick Metal Layer	Au (99.99% purity) Our target from williams
-target deposition thickness (actu al)	600-1000 nm ( ~900 nm, but should be verified)
-(time) (power) (repeats)	(5min + 10min +10 min) (50W)
Reference	Vol 5 page 91
< /p>
Notes	About 20 chips ~All pit up 150x100um Initial FIB analysis shows that the selective etch is very achievable and the thickness was around 900nm.

~~Metallica#7~~

Date	March 10, 2005
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer< td width="66%" style='width:66.0%;padding:.75pt .75pt .75pt .75pt'> Cr
-thickness	~5nm
-(time) (power) (repeats)	(2.0min) (50W) one time
Thick Metal Layer	Au (99.99% purity) Our target from williams
-target deposition thickness (actual)	( ~900 nm, but should be verified)
-(time) (power) (repeats)	25min @50W Schdule is on cleanroom paper.
Reference	V ol 6 page 1

Notes	I reused the Metallica #5 wafer. 20 chips where already on it from Metallica #5 so they have about +2.0 microns of gold now. They will make excellent coherence pinhole structures. 3 chips have only metallica 7 6 chips were from Olav 2 x e4641 4 x e4656 2 x 4645

~~Konstanz~~ ~~samples arriving on April 8 2005 see page 36 of vol 6.~~

~~6 membrane samples (3x 50nm particles and 3x 110nm spheres)~~

~~[0.3nm Co/ 1nm Pt] x 12 grown on a 5nm Pt buffer layer.~~

~~Metallica#8 (~~~~cvenky~~)

Date	July, 2005
Machine and method	M etallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~2nm
-(time) (power) (repeats)
T hick Metal Layer	Au (99.99% purity) Our target from williams
-target deposition thickness (actual)	( ~ nm, but sho uld be verified)
-(time) (power) (repeats)
Reference

Notes	A bunch of membranes were simply coated with Gold to enable polyers to adhere to the Nitride.

~~Metallica#9~~

Date	August 31, 2005
Machine and method	Metallica at CI S, magnetron sputter
Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(2.0min) (50W) one time
Thick Metal Layer	Au (99.99% purity) Our target from williams
-target deposition thickness (actual)	( ~800 nm, from the FIB this seems to be correct)
-(time) (power) (repeats)	11+11 min @50W Schedule is on cleanroom paper.
Reference	Vol 7 page 46

Notes	14 200x200 membranes pit up. These are for liquid injection 13 125x75 membranes pit up. These will be sent to Olav for mulitlayer deposition. They will also be used for FTH test masks. 8 chips were from Ol av. They are an AF coupled series. They are not demagnatized and turn out not to be perpendicular. 2 x e4973 2 x e4974 2 x e4975 2 x e4976

~~Metallica#10~~

Date	September 22, 2005
Machine and method	Metallica at C IS, magnetron sputter
Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(2min) (50W) one time
Thick Metal Layer	Au (99.99% purity) Our target from williams
-target deposition thickness (actual)	( ~300 nm)
-(time) (power) (repeats)	8min15s @50W Schedule is on cleanroom paper.
Reference	Vol 7 page 75 wfs

Notes	C88 C89 150x100um (M9 Pitside) Flatside De p 200x200um (M9 Pitside) Flatside Dep C90 Dosearray (M9 Pitside) Pitside Dep 1 chip (M4)

~~Metallica#11~~

Date	September 28, 2005
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(2min) (50W) one time
Thick Metal Layer	Au (99.99% purity) Our target from williams
-target deposition thickness (actual)	( ~135 nm)
-(time) (power) (repeats)	3.3min@50W Schedule is on cleanroom paper.
Reference	Vol 7 page 88 wfs

Notes	C92 C91 C89 C88 flatside dep (M9 pitside) flatside dep (M9 pitside) flatside dep (M9 pitside) C93 flatside dep - Dosearray Cxxx flatside dep C90 Dosearray

~~Metallica#12~~

Date	Jan 14, 2006
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(2min) (50W) one time
Thick Metal Layer	Au (99.99% purity) Our target from williams
-target deposition thickness (actual)	( ~800-900 nm)
-(time) (power) (repeats)	11+11min@ 50W Schedule is on cleanroom paper.
Reference	Vol 8 page 35 wfs

Notes	C96 C97 C98 C100 till C108

~~Metallica#13~~

Date
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(2min) (50W) one time
Thick Metal Layer	Au (99.99% purity) Our target from williams
-target deposition thickness (actual)	( ~800-900 nm)
-(time) (power) (repeats)	10+10+2min@50W Schedule is on cleanroom paper.
Reference	Vol 1 page 44-46 rr, Vol 8page56wfs

Notes	C109 till C114

~~Metallica#14~~

Date	Mar 4, 2006 ??? ??
Ma chine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~?nm
< p class=MsoNormal>-(time) (power) (repeats)	(?min) (50 W) one time
Thick Metal Layer	Au (99.99% purity) Our target from williams
-target depos ition thickness (actual)	( ~??? nm)
-(time) (power) (repeats)	???min@50W
Reference	Vol 1 page 60,61 rr / Vol ??? page ??? kc

Notes	C125 C127 C128: (e5130) Fe(15)Pd(30)[Co(2.5)Pd(9)]_125 Pd(11) 2x e5131 5blank of which -C145 -4unused

~~Metallica#18~~

Date

Jun 24, 2006

Machine and method

Metallica a t CIS, magnetron sputter

Sticking Layer

-thickness

~5nm

-(time) (power) (repeats)

( 2min) (50W) one time

Thi ck Metal Layer

Au (99.99% purity) Our target from williams

-ta rget deposition thickness (actual)

( 3000 nm)

-(time) (power) (repeats)

66 min@50W

Reference

Vol 1 page 84,85 rr

Notes

ontop of Metallica 4

Sputter 1, SC002#

Date	Apr 15 2006
Machine and method	Andreas sputter chamber
Sticking Layer	Al
-thickness	~2nm
-(time) (power) (repeats)	22s@100W
Thick Metal Layer	Co
-target deposition thickness (actual)	( ~350& nbsp; nm)
-(time) (power) (repeat s)	26min@200W
Caping Layer	Al
-target deposition thickness (actual)	( ~4 nm)
-(time) (power) (repeats)	44s@100W
Reference	Vol 1 page 71 rr

Notes	< p class=MsoNormal>pitside: C132 till C136

Sputter 2, SC003 #

Date	Apr 18 2006
Machine and method	Andreas sputter chamber
Sticking Layer	Al
-thickness	~1nm
-(time) (power) (repeats)	11s@100W
Thick Metal Layer	Co
-target deposition thickness (actual)	( ~370 nm)
-(time) (power) (repeats)	17.8min@200W
Caping Layer	Al
-target deposition thickness (actual)	( ~2 nm)
-(time) (power) (repeats)	22s@100W
Reference	Vol 1 page 71 rr

Note s	pitside: C137 till C141 backside: C135, C136 (Sputter2)

Sputter 3, SC004 #

Date	Apr 21 2006
Machine and method	Andreas sputter chamber
Sticking Layer	Al
-thickness	~1nm
-(time) (power) (repeats)	20s@100W
Thick Me tal Layer	Fe
-target deposition thickness (actual)	( ~300 nm)
-(time) (power) (repeats)	39min@150W
Caping Layer	Al
-target deposition thickness (actual)	( ~3 nm) < /td>
-(time) (power) (repeats)	60s@100W
Reference	Vol 1 page 74 rr

Notes	pitside: C142 till C144

Notes	Depleted the target
	&nb sp;

Metallica#19

Date	August, 2006
Machine and method	Metallica at CIS, magnetron sputter
< td width="34%" style='width:34.0%;padding:.75pt .75pt .75pt .75pt'> Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(2min) (50W) one time
Thick Metal Layer	Au (99.99% purity) Our target from Williams
-target deposition thickness (actual)	( 1000 nm)
-(time) (power) (repeats)	12.5+12.5 min@50W
Reference	RR V2 28f
	&nb sp;
Notes	< tr style='mso-yfti-irow:11;mso-yfti-lastrow:yes'>

Metallica#20

Date	September, 2006
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(2min) (50W) one time
Thick Metal Layer	Au (99.99% purity) Our target from williams
-target deposition thickness (actual)	( 1000 nm)
-(time) (power) (repeats)	12.5+12.5 min@50W
Reference	RR V2 p42f

Notes	Au-Contact went bad during Sputtering. Contact Paste black.

Metallica#21

Date	Nov, 2006
Machine a nd method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(2min) (50W) one time
Thick Metal Layer	Au (99.99% purity ) Our target from williams
-target deposition t hickness (actual)	( 700 nm)
-(tim e) (power) (repeats)	11+11 min@50W
Reference	Kang

Metallica#22

Date	Nov, 2006
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(2min) (50W) one time
Thick Metal Layer	Au (99.99% purity) New target
-target deposition thickness (actual)	( 1000 nm)
-(time) (power) (repeats)	12+12 min@50W
Reference	Kang

Notes	New target
;

Metallica#23

Date	Jan 20 , 2007
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness ~5nm
-(time) (power) (repeats)	(2min) (50W) one time
Thick Metal Layer	Au (99.99% purity) New target
-target deposition thickness (actual)	( 500 nm)
-(time) (power) (repeats)	7.5+7.5 min@50W
Reference	RR V2 p83

Notes	New target, Shampas Saphir Holder < /span>Side 1, SpinWaveInst Samples 3-2,3-3,4-2,4-3,5-2,2-3 ?Pit Side

Metallica#24

Da te	Jan 20, 2007
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(2min) (50W) one time
Thick Metal Layer	Au (99.99% purity) New target
-target deposition thic kness (actual)	( 500 nm)
-(time) (power) (repeats)	7.5+6 min@50W
Reference	RR V2 p83

Notes	New target, Shampas Saphir Holder Side 2, SpinWaveInst Samples 3-2,3-3,4-2,4- 3,5-2,2-3 ?Pit Side

Metallica#25

Date	Jan 27, 2007
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(2mi n) (50W) one time
Thick Metal Layer	Au (99.99% purity) New target
-target deposition thic kness (actual) < /td>	( 4000 nm)
-(time) (power) (repeats)	1.5h, 12*7.5min@50W
Reference	RR V2 p86

Notes	New Au target, on top of Metallica 15 mainly big membranes!

Metallica#26

Date	Feb 17, 2007
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~10nm
-(time) (power) (repeats)	(4mi n) (50W) one time
Thick Metal Layer	Au (99.99% purity) New target
-target deposition thic kness (actual) < /td>	( 1200 nm)
-(time) (power) (repeats)	28min, 2*14min@50W
Reference	RR V2 p95

Notes	New Au target, on top of Metallica 17 w/ 4chips left i.e. 4chips have now ~2um thick gold. Olavs samples C203-C206 1.2um Au

Metallica#27

Date	Feb 26, 2007
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~5nm
-(time) (power) (repeats)	(2mi n) (50W) one time
Thick Metal Layer	Au (99.99% purity) New target
-target deposition thic kness (actual) < /td>	( 1100 nm)
-(time) (power) (repeats)	25min, 10+10+5min@50W
Reference	ck

Notes	New Au target, on top of Metallica 17 w/ 4chips left i.e. 4chips have now ~3um thick gold. Olavs samples C207-C211 1.1um Au

Series of AF multilayer films from Olav. These do not show perpendicular magnetiztion.

e4973

e4974

e4975

e4976

e5381?Cr(15)Pd(30)[Co(2.8)Pd(9)]9 Co(2.5)Pd(x)Fe(25)Pd(20)?x=9 ( ref RR V2 p41)

e5382?Cr(15)Pd(30)[Co(2.8)Pd(9)]9 Co(2.5)Pd(x)Fe(25)Pd(20)?x=6

e5384=e5356?Pd(30) )[Co(4.5)Pd(9)]10 Pd(11)

Metallica#28

Date	Apr. 2, 2008
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~4nm
-(time) (power) (repeats)	(2min) (50W) one time
Thick Metal Layer	Au (99.9% purity)
-target deposition thickness (actual)	800nm-900nm
-(time) (power) (repeats)	(2x11 min)(50W)
Reference	RR Vol 3 page 29

Metallica#29

Date	Oct 1st, 2007
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~4nm
-(time) (power) (repeats)	(2min) (50W) one time
Thick Metal Layer	Au (99.9% purity)
-target deposition thickness (actual)	1.2-1.3um Au
-(time) (power) (repeats)	(4x7.5 min)(50W)
Reference	RR Vol 3 page 7

Metallica#30

Date	Apr 22 2008
Machine and method	Metallica at CIS, magnetron sputter
Sticking Layer	Cr
-thickness	~4nm
-(time) (power) (repeats)	(2min) (50W) one time
Thick Metal Layer	Au (99.9% purity)
-target deposition thickness (actual)	800nm-900nm
-(time) (power) (repeats)	(3x 10 min)(50W) (Gold Target burned through)
Reference	RR Vol 3 page 32
Notes	- On top of Metallica 13 (old wafers from Olav) - New chips are o594 Ta(15)Pd(30)[Co(6.5)Pd(9)]_15 Pd(1)