Speaker: Hongtao Yuan, Stanford University
Program Description
Electric-double-layer transistors (EDLTs) with ionic liquids as gate dielectrics have recently been proved to be the powerful way for an electric-field control of emergent interfacial quantum phenomena and the electronics phase transitions in condense matters, from insulator-superconductivity, paramagnetism-ferromagnetism transitions to spin/valley polarization and spin-orbit interaction modulation. In this talk, we will explore gating induced interfacial carrier accumulation and inversion symmetry breaking for the manipulation of electron charges, spins and orbitals, and further demosntrate the novel tunability of varied electronic/spintronic/valleytronic phase controls in oxides, chacogenides. We expect the synchrotron radiation based photon science probing techniques will directly shed light on the understanding of interfacial electronic phase control under the electric field.
References
1. K. Ueno, et al. Nature Nanotechnology 6, 408-412 (2011).
2. A. T. Bollinger, et al. Nature 472, 458-460 (2011).
3. J. T. Ye, et al. Science, 338, 1193-1196 (2012).
4. H. T. Yuan, et al. Nature Physics 9, 563–569 (2013).
5. H. T. Yuan, et al. Nature Nanotechnology 9, 851–857 (2014).
6. H. T. Yuan, et al. Nature Nanotechnology 2015 in press
