Manipulating the Electrostatic Boundary Conditions in Oxide Heterostructures

Wednesday, February 1, 2012 - 3:00pm

SpeakerHarold Y. Hwang, Departments of Applied Physics and Photon Science, Stanford University and SLAC National Accelerator Laboratory

Program Description

Complex oxides are fascinating systems which host a vast array of unique phenomena, such as high temperature (and unconventional) superconductivity, ‘colossal’ magnetoresistance, all forms of magnetism and ferroelectricity, as well as (quantum) phase transitions and couplings between these states. In recent years, there has been a mini-revolution in the ability to grow thin film heterostructures of these materials with atomic precision. With this level of control, the electrostatic boundary conditions at oxide surfaces and interfaces can be used to form new electronic phases. Between two insulators, for example, metallic, superconducting, and magnetic states can be induced. In analogy to the rich science and technology that emerged from the development of semiconductor heterostructures, we are using these techniques to create novel low-dimensional states inaccessible in bulk oxides.

Manipulating the Electrostatic Boundary Conditions in Oxide Heterostructures
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