Ultrasensitive methods for analyzing contamination on silicon wafer surfaces.
Methods are being developed to analyze trace impurities on the surface of silicon wafers through the use of Total Reflection X-ray Fluorescence (TXRF). In collaboration with Sematech member companies, a facility at the Stanford Synchrotron Radiation Laboratory (SSRL) has been developed to measure transition metal contamination on silicon surfaces at levels as low as 1e-6 monolayer (~1e8atoms/cm2). The research program includes development of new measurement technologies as well as collaborations with industry.
Understanding the relationship between the atomic and electronic structure of semiconductor interfaces and their electrical properties.
Various electron spectroscopies (x-ray photoelectron spectroscopy, photoelectron diffraction, NEXAFS, x-ray standing waves, STM) are used to study the atomic and electronic structures of novel semiconductor materials and semiconductor iinterfaces. The ultimate goal of this research is to understand the physical and electrical properties of these materials through an understanding of their electronic structure. Systems currently being studied are passivated silicon surfaces prepared using wet chemical techniques. Photoemission spectroscopy is used to determine the bonding between the passivating layer and the silicon surface as well as the adsorption characteristics of the adsorbate, i.e., does the adsorbate bond as a molecule or does it dissociate upon bonding.
Ph.D. Student Research Projects
Former Ph.D. Students
Page last modified 12/1/2006