Possibilities for the spectral optimization of SPEAR over the 3-20 keV range using short period undulator technology
-Roman Tatchyn, SSRL
As fourth generation storage ring technology evolves toward higher spectral brightnesses and increased flux, the relative advantage of any third generation synchrotron radiation (SR) source will become strongly defined by the particular spectral range over which its brightness and spectral flux parameters are optimized. Although for any SR source these parameters are determined both by the storage ring and insertion device properties, to date the improvement of performance has focused almost exclusively on advancing the relevant e-beam parameters, viz., the emittance, average current, and beam stability. In general, this has resulted in the optimization of x-ray brightness (at 10 keV - 20 keV, for definiteness) for beam energies in the 5+ GeV range, leading to optimal niches for storage rings such as the APS and the ESRF. Notwithstanding the status quo, if parallel advances in insertion device technology could be realized, optimal performance in this spectral regime would become accessible to storage rings operating at substantially smaller energies, viz., down to the 2-4 GeV range (the range of SPEAR). In this talk the basic properties and parameters of insertion devices relevant to optimizing their performance on storage rings will be reviewed, and concrete examples will be discussed for SPEAR. Specific directions for insertion device r&d that could maximize SSRL's performance at 3-6 keV while extending its optimality toward the 10-20 keV range will be outlined.
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